Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route
نویسندگان
چکیده
منابع مشابه
A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor
Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO₂ films by intentionally increasing the concentration of precur...
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Zirconia ZrO2 and hafnia HfO2 are leading candidates for replacing SiO2 as the gate insulator in complementary metal-oxide semiconductor technology. Amorphous versions of these materials a-ZrO2 and a-HfO2 can be grown as metastable phases on top of a silicon buffer; while they tend to recrystallize during subsequent annealing steps, they would otherwise be of considerable interest because of th...
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We first review earlier work in which we computed the first-principles structural, vibrational, and lattice dielectric properties of the cubic, tetragonal, and monoclinic phases of ZrO2 and HfO2. We then discuss two approaches to the construction of realistic models of amorphous ZrO2: a bmelt-and-quenchQ ab-initio molecular dynamics approach, and an bactivation–relaxation techniqueQ. The struct...
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Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical...
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The dielectric properties of electrochemically grown zirconium oxide films by anodisation of zirconium in 1.0 mol dm-3 phosphoric acid solution were investigated in a 3 to 30 V potential range with a view to inducing surface modifications for eventual use in biomedical and electronic applications. The oxide films grown at different potentials were characterised by Atomic Force Microscopy, X-ray...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2018
ISSN: 2046-2069
DOI: 10.1039/c8ra06911e